Memory programming techniques

ABSTRACT

A memory device that has been programmed to store a single bit or multiple bits can perform a determination of a number of threshold voltages in one or more threshold voltage level regions. Based on the number of threshold voltages meeting or exceeding a threshold level, a page of bits can be read and if the bit error rate of the page of bits is below a threshold rate, the page of bits can be stored in the cells together with other bits stored in the cells and a provided additional page of bits. However, if the bit error rate of the page of bits is at or above the threshold rate, then the bit or bits stored in the cells can be error corrected and stored together with a provided additional page of bits.

TECHNICAL FIELD

Various examples are described herein that relate to programming memorydevices that can store multiple bits per cell.

BACKGROUND

Memory and storage devices are commonly used in computing systems, suchas client or cloud computing environments. For example, smart phones,tablet computers, and laptops commonly use memory and storage devicesfor data storage and retrieval. Servers and data centers in cloudcomputing or edge computing also use memory and storage devices for datastorage and retrieval. Memory and storage devices are advancing in theamount of bits that can be stored per memory cell. However, errors canbe introduced in connection with increased amount of bits stored permemory cell.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts an example portion of memory in accordance with someembodiments.

FIG. 2 depicts an example system.

FIG. 3 depicts an example distribution of threshold voltages.

FIG. 4 depicts an example process that can be used prior to programmingcells.

FIGS. 5A-5C depict an example process.

FIG. 6 depicts an example system.

DETAILED DESCRIPTION

NAND memory devices have the capability to store multiple bits per cell.In connection with programming a cell to store multiple bits, a NANDmemory device can perform a check using a pre-read of a previouslyprogrammed page and provide the page data to a host for the host todetermine if the data was stored correctly with an acceptable bit errorrate (BER). For example, for 16 states captured in a quad-level cell(QLC) NAND, a check is performed for each previously programmed page(e.g., 8 states and 2 states). In some cases, a host device caninterrupt read-out of previously programmed page(s) (e.g., extra page,top page, and/or lower page), request or perform error correction coding(ECC) based correction and determine if the data has an acceptable biterror rate based on the corrected data. If the bit error rate isacceptable, then the data can be stored back into the NAND memorydevice. If the bit error rate is not acceptable, then additional extracorrection can be added or performed on the pre-read data. However,using this known technique, the host device can be involved in ensuringpreviously programmed pages have an acceptable error rate andpotentially perform remedial actions. The host device is known toperform multiple reads to evaluate the BER conditions, which can add tolatency to complete a multiple state programming operation.

Various embodiments provide a manner of programming a cell that stores asingle or multiple bits with the same bits and at least one additionalbit. For example, if a cell stores M bits, and the cell is to store M+nbits, various embodiments can be used to check the error rates of the Mbits prior to storing an additional n bits (where M is 1 or more and nis 1 or more). A determination is made as to the number of thresholdvoltages present within one or more regions of a distribution ofthreshold voltages used to erase or program a cell with multiple bits.For example, a distribution of threshold voltage can be used to erase acell (e.g., 111) and another next higher in magnitude distribution ofthreshold voltages can be used to program a cell with another state(e.g., 011), and so forth. The number of threshold voltages presentwithin one or more regions can be used to determine or approximate aresidual bit error rate (RBER) for the stored M bits (e.g., pages) ofdata. Based on the number of threshold voltages present within one ormore regions being less than a threshold, the M bits and the n bits canbe written into the memory cells.

Based on the number of threshold voltages present within one or moreregions being equal to or more than the threshold, a page (e.g., extrapage) of bits can be read, error corrected, and a bit error ratedetermined for the error corrected page of bits. If the bit error ratedoes not exceed a second threshold, then the error corrected page (e.g.,extra page) and the remaining bits of the M bits (e.g., lower page,upper page) can be stored along with the n bit(s) (e.g., top page) intothe cells. If the bit error rate meets or exceeds the second threshold,then the remaining bits of the M bits (e.g., lower page, upper page) canbe error corrected and the error corrected bits (e.g., extra page, lowerpage, upper page) along with the n bit(s) (e.g., top page) can be storedinto the cells.

Determining a number of threshold voltages in one or more regions can beperformed by a memory device or its controller. A host device can enablea memory device or its controller to determine a number of thresholdvoltages in one or more regions using a register, a set featureoperation, opcode, and so forth. If the number of threshold voltagespresent within one or more regions meets or exceeds a threshold, a passcan be indicated. If the number of threshold voltages present within oneor more regions is less than a threshold, a fail can be indicated. Ahost device can read a result of the check (e.g., pass or fail). Thehost can choose to perform or cause previously stored pages to be readout and error corrected or not based on the pass or fail status.

FIG. 1 depicts an example portion of a NAND flash memory array 100 inaccordance with some embodiments. NAND flash memory array 100 caninclude a multiple non-volatile memory cells 102 arranged in columns,such as series strings 104. In various embodiments, a memory cell 102can include a transistor with a floating gate that stores chargeindicative of one or more bit values. In series strings 104, drainregions of cells 102 are (with the exception of the top cell) coupled toa source region of another cell 102.

Array 100 also includes wordlines 106. Wordline 106 can span acrossmultiple series strings 104 (e.g., a wordline may be coupled to onememory cell of each series string 104) and are connected to the controlgates of each memory cell 102 of a row of the array 100 and used to biasthe control gates of the memory cells 102 in the row. Bitlines 108 areeach coupled to a series string 104 by a drain select gate 114 andsensing circuitry 120 that detects the state of each cell by sensingvoltage or current on a particular bitline 108.

Multiple series strings 104 of memory cells are coupled to a source line110 by a source select gate 112 and to an individual bitline 108 by adrain select gate 114. The source select gates 112 are controlled by asource select gate control line 116 and the drain select gates 114 arecontrolled by a drain select gate control line 118.

In various embodiments, each memory cell 102 can be programmed accordingto an SLC, MLC, TLC, a QLC, or other encoding scheme. Each cell'sthreshold voltage (Vt) is indicative of the data that is stored in thecell. For example, FIG. 3 illustrates example programming of states ofNAND flash memory cells 102 for eight states or levels. Level 0corresponds to an erase state of 111, level 1 corresponds to a firstprogram level of 011. Referring again to FIG. 1, when data (e.g., one ormore pages) is written to memory 100, a plurality of the cells may beprogrammed to a program level.

In various embodiments, a cell state that is set to store multiple bitsmay form a part of multiple different pages, with each bit of the cellcorresponding to a distinct page. For example, for a cell that is toenter a state to store 2 bits (e.g., using an MLC encoding scheme), onebit may correspond to an Upper Page (UP) and the other bit maycorrespond to a Lower Page (LP). For a cell that is to enter a state tostore 3 bits (i.e., using a TLC encoding scheme), one bit may correspondto an LP, one bit may correspond to a UP, and the other bit maycorrespond to an Extra Page (XP). For a cell that is to store 4 bits(i.e., using a QLC encoding scheme), one bit may correspond to an LP,another bit may correspond to a UP, another bit may correspond to an XP,and the final bit may correspond to a Top Page (TP). Each page (e.g.,LP, UP, XP, or TP) may include an aggregation of corresponding bitsstored by a plurality of different cells of a wordline.

A programming sequence for a group of cells may include programming ofall of the intended pages into the group of cells. A programmingsequence may include one or more programming passes. A programming pass(which may include one or more programming loops) may program one ormore pages. A programming pass may include the application of one ormore effective program voltages to cells to be programmed followed bythe application of one or more verify voltages to these cells in orderto determine which cells have finished programming (subsequentprogramming passes generally will not apply an effective program voltageand/or a verify voltage to the cells that have finished programming).The application of an effective program voltage to a cell may includechanging the voltage difference between a control gate and a channel ofthe cell in order to change the threshold voltage of the cell.Accordingly, a voltage of a wordline (coupled to the control gate of thetarget cell) and/or a channel of the cell may be set in order toeffectuate application of an effective program voltage. As a programvoltage is commonly used to refer to a voltage applied to a wordline,the effective program voltage can be the voltage difference between acontrol gate and channel of a cell (which in instances where the channelis held at 0 V can be synonymous with a program voltage).

FIG. 2 depicts an example system. Memory device 200 can communicate withhost system 250 using respective interfaces 220 and 256. Memory medium202 can be a memory or storage medium that can store one or more bits inone or more memory cells. For example, memory medium 202 can includenon-volatile and/or volatile types of memory. Non-volatile types ofmemory may be types of memory whose state is determinate even if poweris interrupted to the device. In some examples, memory medium 202 caninclude block addressable memory devices, such as NAND or NORtechnologies. Memory medium 202 can also include non-volatile types ofmemory, such as 3D crosspoint memory (3DxP), or other byte addressablenon-volatile memory. Memory medium 202 can include memory devices thatuse chalcogenide phase change material (e.g., chalcogenide glass),multi-threshold level NAND flash memory, NOR flash memory, single ormulti-level phase change memory (PCM), a resistive memory, nanowirememory, ferroelectric transistor random access memory (FeTRAM), magnetoresistive random access memory (MRAM) memory that incorporates memristortechnology, or spin transfer torque MRAM (STT-MRAM), or a combination ofany of the above, or other memory types. Memory medium 202 can include asingle-level cell (SLC) NAND storage device, a multi-level cell (MLC)NAND storage device, triple-level cell (TLC) NAND storage device,quad-level cell (QLC) storage device.

According to some examples, volatile types of memory included in memorymedium 202 can include, but are not limited to, random-access memory(RAM), Dynamic RAM (D-RAM), double data rate synchronous dynamic RAM(DDR SDRAM), static random-access memory (SRAM), thyristor RAM (T-RAM)or zero-capacitor RAM (Z-RAM). Volatile types of memory may becompatible with a number of memory technologies, such as DDR4 (DDRversion 4, initial specification published in September 2012 by JEDEC),LPDDR4 (LOW POWER DOUBLE DATA RATE (LPDDR) version 4, JESD209-4,originally published by JEDEC in August 2014), WIO2 (Wide I/O 2(WideIO2), JESD229-2, originally published by JEDEC in August 2014), HBM(HIGH BANDWIDTH MEMORY DRAM, JESD235, originally published by JEDEC inOctober 2013), DDR5 (DDR version 5, currently in discussion by JEDEC),LPDDR5 (LPDDR version 5, currently in discussion by JEDEC), HBM2 (HBMversion 2, currently in discussion by JEDEC), and/or others, andtechnologies based on derivatives or extensions of such specifications.

Controller 204 can be coupled with or configured to couple with acomputing platform such as host 250 using interface 220. Controller 204can communicate with elements of the computing platform to read datafrom memory medium 202 or write data to memory medium 202. Controller204 can be configured to receive and perform commands from host 250concerning use of memory medium 202 (e.g., read data, write data, orindicate error rate). Controller 204 can be coupled to word lines ofmemory medium 202 to select one of the word lines, apply read voltages,apply program voltages combined with bit line potential levels, or applyerase voltages. Controller 204 can be coupled to bit lines of memorymedium 202 to read data stored in the memory cells, determine a state ofthe memory cells during a program operation, and control potentiallevels of the bit lines to promote or inhibit programming and erasing.Other circuitry can be used for applying selected read voltages andother signals to memory medium 202.

Controller 204 can include or access transfer buffer 203 to perform anerror checking and correction of data previously written to memorymedium 202. Transfer buffer 203 can be a volatile memory, such as staticrandom access memory (SRAM). Transfer buffer 203 can include some othertype of volatile memory that is different from an SRAM. In accordancewith an embodiment, transfer buffer 203 usage can be reduced and freedfor other uses by releasing transfer buffer 203 following the thresholdvoltage number check as opposed to holding transfer buffer 203 for anentire program time.

Threshold voltages block 206 can store threshold voltages for cells inmemory medium 202 and provide controller 204 with applicable thresholdvoltages (Vt) to apply to memory cells in memory medium 202 to cause astate of cells to enter one of multiple states. For example, byapplication of threshold voltages to memory cells in memory medium 202,memory cells are programmed to enter a particular state to store one ormore bits or memory cells can be erased.

In some embodiments, prior to programming memory cells to store 4bits/cell, controller 204 can determine a bit error rate of one or morebits stored in memory cells that store 3 bits/cell. Various embodimentsprovide for memory device 200 to count the cell threshold voltages inone or more expected valley ranges for use in programming or erasing 3bits/cell. For example, a bit error rate for the 3 bits/cell can bedetermined based on a range check including counting a number ofthreshold voltages in one or more ranges. For example, the one or moreranges can be a range of threshold voltage values between apexes (e.g.,peak numbers of cell threshold voltages) for erase or program states.For example, FIG. 3 depicts an example of threshold voltage valuedistributions for memory cells for 8 erase and programming states (e.g.,3 bits/cell). One or more ranges can be selected between an erase statefor level 0 and a program state for level 1, a program state for level 1and a program state for level 2, and so forth to between a program statefor level 6 and a program state for level 7.

A total number of threshold voltages can be a sum of threshold voltageswithin one or more ranges. For example, the total number can be a firstrange (e.g., between or among level 0 and level 1) summed with a numberof threshold voltages within a second range (e.g., between or amonglevel 3 and level 4) summed with a number of threshold voltages within athird range (e.g., between or among level 4 and level 5) summed with anumber of threshold voltages within a fourth range (e.g., between oramong level 4 and level 5) and summed with a number of thresholdvoltages within a fifth range (e.g., between or among level 6 and level7).

For example, if a total number of threshold voltages in the one or moreranges does not meets and does not exceed a threshold, the previouslystored bits for first, second, and third pages (e.g., UP, LP, XP) andthe fourth page (e.g., TP) can be written into memory cells.

For example, if a total number of threshold voltages in the one or moreranges meets or exceeds a threshold, the RBER for the three bit/cellstorage can be considered to be excessive and corrective action can betaken prior to storing 4 bits/cell. Corrective action can includereading out bits from a first page of memory cells (e.g., XP),performing error correction encoding (e.g., by controller 204 using ECC205) on the bits of the first page, and determining if the bit errorrate of the bits of the first page exceeds a threshold. In someexamples, error correction and bit error checking can be performed onother pages than the extra page, for example, upper page or lower page.If the bit error rate does not exceed a threshold, then the errorcorrection coded bits of the first page (e.g., XP) can be written to thecells along with data for a fourth page (e.g., TP) and previously storedbits for second and third pages (e.g., UP and LP).

If the bit error rate exceeds a threshold, then error correction (e.g.,using ECC 205) can be applied to bits of the second and third pages ofcells (e.g., UP and LP) and the error corrected bits of the first,second, and third pages (e.g., XP, UP, and LP) and a fourth page (e.g.,TP) can be provided for storage into cells. Accordingly, storage of afourth bit in addition to previously stored 3 bits in a cell can beperformed while potentially improving the accuracy of the previouslystored 3 bits per cell.

Referring to FIG. 2, memory 200 can perform a determination of whetherthe total number of threshold voltages in one or more regions of the 3bits/cell does not meet and exceed a threshold (pass) or meets orexceeds a threshold (fail) and report the pass/fail status to host 250.

Host 250 can cause a storage of 4 bits/cell using memory medium 202.Memory medium 202 can be configured to store 4 bits/cell. In connectionwith the storage of 4 bits/cell, host 250 can cause memory device 200 toverify accuracy and potentially error correct stored 3 bits/cell. Forexample, host 250 can configure the read voltage window or valley rangein which the Vt count operation occurs. Host 250 can enable one or morerange checks via registers 208. Based on one or more flags in register208, memory device 200 can perform a stand-alone measurement of cell Vtwithin a specific window range or ranges.

Host 250 can configure memory device 200 with a threshold criteriaagainst which Vt counts (sums) are compared to determine a pass/failstate. A threshold count meeting or exceeding a threshold can cause astatus register in registers 208 to be set to indicate pass/fail.Multiple ranges can be checked (e.g., up to seven ranges) or addedtogether to check the ranges against a threshold.

Host 250 can be any type of computing platform with processors 252 andmemory 254, as well as other components. For example, an applicationexecuting on processors 252 can cause a data write to memory device 200.In connection with a 4 bit/cell storage operation, host 250 can initiatean 8 state (e.g., extra page (XP)) threshold voltage single or multiplerange check against a configurable threshold. Memory device 200 canprovide the pass/fail status in a status register SR[0] among registers208. Range check can be applied to either or both single plane ormultiplane modes. A plane can include multiple blocks, where each blockincludes multiple pages of storage arrays. In the case of a single planerange check operation, host 250 can provide a particular sequence withan XP page address without any data input. A status register SR[0] canreflect the pass/fail status after completion of the range check. Forexample, a single plane range check can include one or more of thefollowing:

-   -   1. Host 250 enables range check by writing to a latch in memory        device 200 with a bit or bits set to enable range check.    -   2. Host 250 can issue a command to write to an extra page but        with no provided data and with an indicator to start a range        check operation.    -   3. Host 250 can wait a time amount of t_valley_chk time or for        memory device 200 to indicate a ready state (e.g., range check        completed).    -   4. Memory device 200 can update status register SR[0] with        pass/fail status based on results of range check.    -   5. Host 250 can read the status register SR[0] with pass/fail        status based on results of range check.    -   6. Host 250 disables range check feature by setting a bit or        bits to disable range check.

For example, to initiate multiplane range check operation, host 250 canenable range check and provide instructions to write data to extra page(XP) for multiple planes but with no data provided and include anindicator (e.g., 10 h value) to start range check with an instructionfor a write to a plane (e.g., Nth plane). Memory device 200 can updatethe pass/fail status per plane on status register SR[0]. Host 250 canuse a read status instruction to obtain the pass/fail status per plane.For example, a multiple plane range check for planes P0 to P3 caninclude one or more of the following:

-   1. Host 250 enables range check by writing to a latch in memory    device 200 with a bit or bits set to enable range check.-   2. Host 250 provides instruction to write to XP of plane P0 but with    no data and an indicator to wait (e.g., 11 h).-   3. Host 250 waits time amount tDBSY.-   4. Host 250 provides instruction to write to XP of plane P1 but with    no data and an indicator to wait (e.g., 11 h).-   5. Host 250 waits time amount tDBSY.-   6. Host 250 provides instruction to write to XP of plane P2 but with    no data and an indicator to wait (e.g., 11 h).-   7. Host 250 waits time amount tDBSY.-   8. Host 250 provides instruction to write to XP of plane P3 but with    no data and an indicator to commence range check (e.g., 10 h).-   9. Host 250 waits a time amount of t_valley_chk.-   10. Memory device 200 updates status register SR[0] with pass/fail    status per plane.-   11. Host 250 can read the status register SR[0] with pass/fail    status based on results of range check.-   12. Host 250 disables range check feature by setting a bit or bits    to disable range check.

Based on the range check status, host 250 can choose an option toconfigure the pre-read for the programming memory device 200 with 4bits/cell. For a range check pass indication at SR[0], host 250 canissue a program instruction with top page data and wait for a timeincrement for memory device 200 to indicate the program operation hascompleted. Memory device 200 can store top page with previously storedlower page, upper page, and extra page data into memory medium 202. Host250 can write to a latch with a particular value to command memorydevice 200 to perform the operations.

For a range check fail indication at SR[0], host 250 can (1) issue aprogram instruction with top page data; (2) wait for an increment oftime; (3) issue a page read instruction for extra page data; (4) waitfor extra page data to be corrected via error correction coding (e.g.,controller 204 can perform recovery based on error correction coding);(5) issue a program instruction to write the error corrected extra pagedata to memory medium 202; and (6) wait for a time increment for memorydevice 200 to indicate the program operation has completed. Memorydevice 200 can store top page with error corrected extra page data withpreviously stored lower page and upper page data into memory medium 202.Host 250 can write to a latch with a particular value to command memorydevice 200 to perform the operations.

For a range check fail indication at SR[0] together with a bit errorrate of the error corrected extra page data exceeding a threshold, host250 can (1) issue a program instruction with top page data; (2) wait foran increment of time; (3) issue a page read instruction for extra pagedata; (4) wait for extra page data to be corrected via error correctioncoding (e.g., controller 204 can perform recovery based on errorcorrection coding); (5) issue a program instruction to write the errorcorrected extra page data to memory medium 202; (6) issue a page readinstruction for upper page data; (7) wait for upper page data to becorrected via error correction coding (e.g., controller 204 can performrecovery based on error correction coding); (8) issue a programinstruction to write the error corrected upper page data to memorymedium 202; (9) issue a page read instruction for lower page data; (10)wait for lower page data to be corrected via error correction coding(e.g., controller 204 can perform recovery based on error correctioncoding); (11) issue a program instruction to write the error correctedlower page data to memory medium 202; and (12) wait for a time incrementfor memory device 200 to indicate the program operation has completed.Memory device 200 can store top page data with error corrected extrapage data, error corrected lower page, and error corrected upper pagedata into memory medium 202. Host 250 can write to a latch with aparticular value to command memory device 200 to perform the operations.

To store 4 bits/cell, 2 bits/cell can be written to a cell followed by 3bits/cell and then 4 bits per cell. For example, to cause memory device200 to store 16 states (4 bits/cell), host 250 can issue a 2 stateprogramming command(s) (e.g., for lower page), 8 state programmingcommand(s) (e.g., for extra page and upper page), and a 16 stateprogramming command(s) (e.g., for top page and error or non-errorcorrected versions of extra page, upper page, or lower page data).

In some embodiments, if recovery using error correction coding does notrecover data, other techniques can be used to recover data such as useof XOR recovery techniques using data stored in other portions of memorymedium 202 or other memory.

FIG. 3 depicts an example distribution of threshold voltages. Ahorizontal axis represents a magnitude of threshold voltage and avertical axis represents a number of threshold voltages. The exampledistributions of threshold voltages are for 3-bit per cell erase orprogramming (TLC) and represent threshold voltages applied to erase orprogram cells to eight levels (levels 0 to 7). Level 0 represents anerase state of all 3 bits per cell. Level 1 represents a program statefor the extra page (XP) bits and a zero state for upper page (UP) andlower page (LP) bits.

In some cases, if overlap is present between threshold voltagedistributions for multiple levels, a bit error rate can be higher andthe data stored in the cells can be incorrectly stored or retrieved butwith errors. A number of threshold voltages between levels can representan expected error rate.

In some embodiments, threshold voltages in one or more regions of thedistribution of threshold voltages can be counted, where a regionrepresents a range of threshold voltages. For example, a non-limitingexample of a range span can be approximately 0-100 mV. A sum of thenumber of threshold voltages in one or more regions can be determinedand the sum can be compared against a check_threshold value. In thisexample, the regions are between and among level 0 and level 1, betweenand among level 3 and level 4, between and among level 4 and level 5,and between and among level 6 and level 7. However, different regionscan be chosen. In some cases, a single region can be chosen. Thecheck_threshold value can be programmed by a host computer and appliedby a memory device or its memory controller. The check_threshold valuecan be determined based on testing of the memory device to determineacceptable bit error rates corresponding to values of check_threshold.The check_threshold value can be determined based on testing of otherimplementations of memory device to determine acceptable bit error ratescorresponding to values of check_threshold.

A determination of not meeting and not exceeding check_threshold value(pass) or meeting or exceeding check_threshold value (fail) can beindicated to the host computing system using a register value. The hostcomputing system can determine how to instruct the memory device toprogram 4 bits per cell based on the pass/fail indication.

FIG. 4 depicts an example process that can be used prior to programmingcells with multiple bits per cell. At 402, a range check operation isperformed. For example, a memory (e.g., non-volatile or volatile) canperform a range check operation in response to a request from anotherdevice (e.g., host). The range check operation can be performed forthreshold voltage distributions used to erase or program 8 states (e.g.,3 bits/cell), or fewer or more states. The range check operation candetermine a number of threshold voltages in one or more ranges ofthreshold voltages. If the total number threshold voltages in one ormore ranges of threshold voltages does not meet and does not exceed athreshold value, then 450 can follow 402. At 450, a page of data (e.g.,top page) can be received from a device (e.g., host). At 452, the pageof data can be stored with previously stored pages of data. For example,one or multiple programming passes can be used to store lower page data,upper page data, extra page data, and top page data. A device (e.g.,host) can write to a memory device latch to cause the memory device toperform 450 and 452.

If the total number threshold voltages in one or more ranges ofthreshold voltages meets or exceeds a threshold value, then 404 canfollow 402. At 404, a page of data (e.g., top page) can be received froma device (e.g., host). At 406, error correction can be performed on asecond page of data (e.g., extra page). If the bit error rate of thesecond page of data is within an accepted range, then 410 can follow. At410, the error corrected second page of data is available. Errorcorrection can be performed by the memory device's controller or otherdevice (e.g., host) or software and is made available by transfer orstorage in a memory or cache. At 412, one or multiple programming passescan be used to store page of data (e.g., top page), the error correctedsecond page of data (e.g., extra page), and the lower page data andupper page data. A device (e.g., host) can write to a memory devicelatch to cause the memory device to perform 410 and 412.

If the bit error rate of the second page of data is not within anaccepted range, then 420 can follow. At 420, the error corrected secondpage of data is available. Error correction can be performed by thememory device's controller or other device (e.g., host) or software andis made available by transfer or storage in a memory. In some cases, arecovery operation can be performed on the second page of data such asXOR data recovery operations in connection with providing an errorcorrected second page of data. At 422, reading of data and errorcorrection are performed on a third page of data (e.g., upper page). Forexample, the third page of data can be read using a read operation fromthe memory device. The read operation can involve reading data andproviding the data to a host device for error correction (e.g., ECC). Insome examples, the read operation can involve reading data and using amemory controller to perform error correction (e.g., ECC). At 424, theerror corrected third page of data is available at the memory device. At426, reading of data and error correction are performed on a fourth pageof data (e.g., lower page). The read operation can involve reading dataand providing the data to a host device for error correction (e.g.,ECC). In some examples, the read operation can involve reading data andusing a memory controller to perform error correction (e.g., ECC). At428, the error corrected fourth page of data is available. At 430, oneor multiple programming passes can be used to store the page of data(e.g., top page), the error corrected second page of data (e.g., extrapage), the error corrected third page of data (e.g., lower page), andthe error corrected fourth page of data (e.g., upper page). A device(e.g., host) can write to a memory device latch to cause the memorydevice to perform 420-430.

FIGS. 5A-5C depict an example process. At 502, a determination can bemade as to a sum of a number of threshold voltages in one or moreregions of a threshold voltage distribution for programming or erasing amemory device capable of storing multiple bits per cell. The one orregions can be specified during a test or programming phase of a memorydevice (e.g., non-volatile memory). A memory device can determine thesum and report the sum via a register or memory region. At 504, adetermination is made as to whether the sum meets or exceeds athreshold. In some examples, a memory device can make the determinationand indicate whether the threshold is met or exceeded (fail) or not metand not exceeded (pass) using a register. If the sum meets or exceeds athreshold, a process of FIG. 5B can follow. If the sum does not meet anddoes not exceed a threshold, 506 can follow. At 506, a first page ofdata can be received at the memory device. For example, the first pageof data can be provided by a host device. For example, the first page ofdata can be top page data for use in 4 bit/cell programming. At 508, thememory device can perform memory cell programming using first page andstored second, third, and fourth page from 3 bits/cell programming(e.g., lower page, extra page, and upper page). The programming ofmemory cells can occur in response to one or more programming commandsfrom a host device for one or more pages of data.

FIG. 5B depicts an example process. The process of FIG. 5B can beperformed in response to a sum of threshold voltages meeting orexceeding a threshold level. At 520, a first page of data can bereceived by a memory device (e.g., non-volatile memory). For example,the first page of data can be provided by a host device. For example,the first page of data can be top page data for use in 4 bit/cellprogramming. At 522, error correction can be performed on a second pageof data. For example, the host or memory device (e.g., controller) canperform the error correction on the second page of data. The second pageof data can be an extra page data stored in a 3 bit/cell state, althoughother pages can be used (e.g., upper page or lower page).

At 524, a determination can be made as to whether the error rate of theerror corrected second page of data is acceptable. If the error rate isacceptable, 526 can follow. At 526, the memory device can program memorycells with multiple bits/cell using first page data (e.g., top page),error corrected second page data (e.g., extra page), and stored thirdand fourth pages from 3 bits/cell programming (e.g., upper page andlower page).

If the error rate is determined at 524 to be not acceptable, the processof FIG. 5C can follow. At 530 of FIG. 5C, the error corrected secondpage of data is available. For example, the host or memory device (e.g.,controller) can perform error correction of the second page of databased on ECC and make it available. At 532, error correction to recoverdata can be performed on a third page of data. For example, the host ormemory device (e.g., controller) can perform error correction of thethird page of data based on ECC and make it available. The third page ofdata can be an upper page of data. At 534, error correction to recoverdata can be performed on a fourth page of data. For example, the host ormemory device (e.g., controller) can perform error correction of thefourth page of data based on ECC and make it available. The fourth pageof data can be a lower page of data. At 536, using one or multipleprogramming passes, the first page and error corrected second, third andfourth pages can be stored in memory cells for 4 bits/cell storage.

FIG. 6 depicts an example system. System 600 includes processor 610,which provides processing, operation management, and execution ofinstructions for system 600. Processor 610 can include any type ofmicroprocessor, central processing unit (CPU), graphics processing unit(GPU), processing core, or other processing hardware to provideprocessing for system 600, or a combination of processors. Processor 610controls the overall operation of system 600, and can be or include, oneor more programmable general-purpose or special-purpose microprocessors,digital signal processors (DSPs), programmable controllers, applicationspecific integrated circuits (ASICs), programmable logic devices (PLDs),or the like, or a combination of such devices.

In one example, system 600 includes interface 612 coupled to processor610, which can represent a higher speed interface or a high throughputinterface for system components that needs higher bandwidth connections,such as memory subsystem 620 or graphics interface components 640.Interface 612 represents an interface circuit, which can be a standalonecomponent or integrated onto a processor die. Where present, graphicsinterface 640 interfaces to graphics components for providing a visualdisplay to a user of system 600. In one example, graphics interface 640can drive a high definition (HD) display that provides an output to auser. High definition can refer to a display having a pixel density ofapproximately 100 PPI (pixels per inch) or greater and can includeformats such as full HD (e.g., 1080p), retina displays, 4K (ultra-highdefinition or UHD), or others. In one example, the display can include atouchscreen display. In one example, graphics interface 640 generates adisplay based on data stored in memory 630 or based on operationsexecuted by processor 610 or both. In one example, graphics interface640 generates a display based on data stored in memory 630 or based onoperations executed by processor 610 or both.

Memory subsystem 620 represents the main memory of system 600 andprovides storage for code to be executed by processor 610, or datavalues to be used in executing a routine. Memory subsystem 620 caninclude one or more memory devices 630 such as read-only memory (ROM),flash memory, one or more varieties of random access memory (RAM) suchas DRAM, or other memory devices, or a combination of such devices.Memory 630 stores and hosts, among other things, operating system (OS)632 to provide a software platform for execution of instructions insystem 600. Additionally, applications 634 can execute on the softwareplatform of OS 632 from memory 630. Applications 634 represent programsthat have their own operational logic to perform execution of one ormore functions. Processes 636 represent agents or routines that provideauxiliary functions to OS 632 or one or more applications 634 or acombination. OS 632, applications 634, and processes 636 providesoftware logic to provide functions for system 600. In one example,memory subsystem 620 includes memory controller 622, which is a memorycontroller to generate and issue commands to memory 630. It will beunderstood that memory controller 622 could be a physical part ofprocessor 610 or a physical part of interface 612. For example, memorycontroller 622 can be an integrated memory controller, integrated onto acircuit with processor 610.

While not specifically illustrated, it will be understood that system600 can include one or more buses or bus systems between devices, suchas a memory bus, a graphics bus, interface buses, or others. Buses orother signal lines can communicatively or electrically couple componentstogether, or both communicatively and electrically couple thecomponents. Buses can include physical communication lines,point-to-point connections, bridges, adapters, controllers, or othercircuitry or a combination. Buses can include, for example, one or moreof a system bus, a Peripheral Component Interconnect (PCI) bus, aHyperTransport or industry standard architecture (ISA) bus, a smallcomputer system interface (SCSI) bus, a universal serial bus (USB), oran Institute of Electrical and Electronics Engineers (IEEE) standard1364 bus.

In one example, system 600 includes interface 614, which can be coupledto interface 612. In one example, interface 614 represents an interfacecircuit, which can include standalone components and integratedcircuitry. In one example, multiple user interface components orperipheral components, or both, couple to interface 614. Networkinterface 650 provides system 600 the ability to communicate with remotedevices (e.g., servers or other computing devices) over one or morenetworks. Network interface 650 can include an Ethernet adapter,wireless interconnection components, cellular network interconnectioncomponents, USB (universal serial bus), or other wired or wirelessstandards-based or proprietary interfaces. Network interface 650 cantransmit data to a remote device, which can include sending data storedin memory. Network interface 650 can receive data from a remote device,which can include storing received data into memory.

In one example, system 600 includes one or more input/output (I/O)interface(s) 660. I/O interface 660 can include one or more interfacecomponents through which a user interacts with system 600 (e.g., audio,alphanumeric, tactile/touch, or other interfacing). Peripheral interface670 can include any hardware interface not specifically mentioned above.Peripherals refer generally to devices that connect dependently tosystem 600. A dependent connection is one where system 600 provides thesoftware platform or hardware platform or both on which operationexecutes, and with which a user interacts.

In one example, system 600 includes storage subsystem 680 to store datain a nonvolatile manner. In one example, in certain systemimplementations, at least certain components of storage 680 can overlapwith components of memory subsystem 620. Storage subsystem 680 includesstorage device(s) 684, which can be or include any conventional mediumfor storing large amounts of data in a nonvolatile manner, such as oneor more magnetic, solid state, or optical based disks, or a combination.Storage 684 holds code or instructions and data 686 in a persistentstate (i.e., the value is retained despite interruption of power tosystem 600). Storage 684 can be generically considered to be a “memory,”although memory 630 is typically the executing or operating memory toprovide instructions to processor 610. Whereas storage 684 isnonvolatile, memory 630 can include volatile memory (i.e., the value orstate of the data is indeterminate if power is interrupted to system600). In one example, storage subsystem 680 includes controller 682 tointerface with storage 684. In one example controller 682 is a physicalpart of interface 614 or processor 610 or can include circuits or logicin both processor 610 and interface 614.

A power source (not depicted) provides power to the components of system600. More specifically, power source typically interfaces to one ormultiple power supplies in system 600 to provide power to the componentsof system 600. In one example, the power supply includes an AC to DC(alternating current to direct current) adapter to plug into a walloutlet. Such AC power can be renewable energy (e.g., solar power) powersource. In one example, power source includes a DC power source, such asan external AC to DC converter. In one example, power source or powersupply includes wireless charging hardware to charge via proximity to acharging field. In one example, power source can include an internalbattery, alternating current supply, motion-based power supply, solarpower supply, or fuel cell source.

In an example, system 600 can be implemented using interconnectedcompute sleds of processors, memories, storages, network interfaces, andother components. High speed interconnects can be used such as PCIe,Ethernet, or optical interconnects (or a combination thereof).

Various examples may be implemented using hardware elements, softwareelements, or a combination of both. In some examples, hardware elementsmay include devices, components, processors, microprocessors, circuits,circuit elements (e.g., transistors, resistors, capacitors, inductors,and so forth), integrated circuits, ASICs, PLDs, DSPs, FPGAs, memoryunits, logic gates, registers, semiconductor device, chips, microchips,chip sets, and so forth. In some examples, software elements may includesoftware components, programs, applications, computer programs,application programs, system programs, machine programs, operatingsystem software, middleware, firmware, software modules, routines,subroutines, functions, methods, procedures, software interfaces, APIs,instruction sets, computing code, computer code, code segments, computercode segments, words, values, symbols, or any combination thereof.Determining whether an example is implemented using hardware elementsand/or software elements may vary in accordance with any number offactors, such as desired computational rate, power levels, heattolerances, processing cycle budget, input data rates, output datarates, memory resources, data bus speeds and other design or performanceconstraints, as desired for a given implementation. It is noted thathardware, firmware and/or software elements may be collectively orindividually referred to herein as “module,” “logic,” “circuit,” or“circuitry.”

Some examples may be implemented using or as an article of manufactureor at least one computer-readable medium. A computer-readable medium mayinclude a non-transitory storage medium to store logic. In someexamples, the non-transitory storage medium may include one or moretypes of computer-readable storage media capable of storing electronicdata, including volatile memory or non-volatile memory, removable ornon-removable memory, erasable or non-erasable memory, writeable orre-writeable memory, and so forth. In some examples, the logic mayinclude various software elements, such as software components,programs, applications, computer programs, application programs, systemprograms, machine programs, operating system software, middleware,firmware, software modules, routines, subroutines, functions, methods,procedures, software interfaces, API, instruction sets, computing code,computer code, code segments, computer code segments, words, values,symbols, or any combination thereof.

According to some examples, a computer-readable medium may include anon-transitory storage medium to store or maintain instructions thatwhen executed by a machine, computing device or system, cause themachine, computing device or system to perform methods and/or operationsin accordance with the described examples. The instructions may includeany suitable type of code, such as source code, compiled code,interpreted code, executable code, static code, dynamic code, and thelike. The instructions may be implemented according to a predefinedcomputer language, manner or syntax, for instructing a machine,computing device or system to perform a certain function. Theinstructions may be implemented using any suitable high-level,low-level, object-oriented, visual, compiled and/or interpretedprogramming language.

One or more aspects of at least one example may be implemented byrepresentative instructions stored on at least one machine-readablemedium which represents various logic within the processor, which whenread by a machine, computing device or system causes the machine,computing device or system to fabricate logic to perform the techniquesdescribed herein. Such representations, known as “IP cores” may bestored on a tangible, machine readable medium and supplied to variouscustomers or manufacturing facilities to load into the fabricationmachines that actually make the logic or processor.

The appearances of the phrase “one example” or “an example” are notnecessarily all referring to the same example or embodiment. Any aspectdescribed herein can be combined with any other aspect or similar aspectdescribed herein, regardless of whether the aspects are described withrespect to the same figure or element. Division, omission or inclusionof block functions depicted in the accompanying figures does not inferthat the hardware components, circuits, software and/or elements forimplementing these functions would necessarily be divided, omitted, orincluded in embodiments.

Some examples may be described using the expression “coupled” and“connected” along with their derivatives. These terms are notnecessarily intended as synonyms for each other. For example,descriptions using the terms “connected” and/or “coupled” may indicatethat two or more elements are in direct physical or electrical contactwith each other. The term “coupled,” however, may also mean that two ormore elements are not in direct contact with each other, but yet stillco-operate or interact with each other.

The terms “first,” “second,” and the like, herein do not denote anyorder, quantity, or importance, but rather are used to distinguish oneelement from another. The terms “a” and “an” herein do not denote alimitation of quantity, but rather denote the presence of at least oneof the referenced items. The term “asserted” used herein with referenceto a signal denote a state of the signal, in which the signal is active,and which can be achieved by applying any logic level either logic 0 orlogic 1 to the signal. The terms “follow” or “after” can refer toimmediately following or following after some other event or events.Other sequences of steps may also be performed according to alternativeembodiments. Furthermore, additional steps may be added or removeddepending on the particular applications. Any combination of changes canbe used and one of ordinary skill in the art with the benefit of thisdisclosure would understand the many variations, modifications, andalternative embodiments thereof.

Disjunctive language such as the phrase “at least one of X, Y, or Z,”unless specifically stated otherwise, is otherwise understood within thecontext as used in general to present that an item, term, etc., may beeither X, Y, or Z, or any combination thereof (e.g., X, Y, and/or Z).Thus, such disjunctive language is not generally intended to, and shouldnot, imply that certain embodiments require at least one of X, at leastone of Y, or at least one of Z to each be present. Additionally,conjunctive language such as the phrase “at least one of X, Y, and Z,”unless specifically stated otherwise, should also be understood to meanX, Y, Z, or any combination thereof, including “X, Y, and/or Z.”

What is claimed is:
 1. A method comprising: determining a bit error rateassociated with bits stored in a plurality of memory cells, wherein atleast a portion of the plurality of memory cells store M bits per celland wherein M is an integer of 1 or more, wherein the bit error rate isbased on a summation of a number of threshold voltages in a regionbetween or among two threshold voltage distributions and programming aplurality of memory cells with M+n bits per cell based on the determinedbit error rate, wherein n is an integer of 1 or more.
 2. The method ofclaim 1, wherein a memory device performs the determining the bit errorrate based on a number of threshold voltages in one or more regionsbetween or among threshold voltage distributions.
 3. The method of claim1, wherein the programming a plurality of memory cells with M+n bits percell comprises: in response to the bit error rate being below athreshold, programming the plurality of memory cells based on the n bitsper cell and the M or fewer number of pages of data.
 4. The method ofclaim 1, wherein the programming a plurality of memory cells with M+nbits per cell comprises: in response to the bit error rate being at orabove a threshold: performing error correction on M or fewer number ofpages of data and programming the plurality of memory cells based on then bits per cell and the error corrected M or fewer number of pages ofdata.
 5. The method of claim 1, wherein the programming a plurality ofmemory cells with M+n bits per cell comprises: in response to the biterror rate being at or above a threshold: performing error correction ona second page stored by the plurality of memory cells, determining asecond bit error rate of the error corrected second page, and inresponse to the second bit error rate of the error corrected second pagebeing less than a second threshold, programming the plurality of memorycells based on the n bits per cell, the error corrected second page, andthird and fourth pages stored by the plurality of memory cells.
 6. Themethod of claim 1, wherein the programming a plurality of memory cellswith M+n bits per cell comprises: in response to the bit error ratebeing at or above a threshold: performing error correction on a secondpage stored by the plurality of memory cells, determining a second biterror rate of the error corrected second page, and in response to thesecond bit error rate of the error corrected second page being at orabove a second threshold: performing error correction on a third pagestored by the plurality of memory cells, performing error correction ona fourth page stored by the plurality of memory cells, and programmingthe plurality of memory cells based on the n bits per cell, the errorcorrected second page, the error corrected third page, and the errorcorrected fourth page.
 7. The method of claim 1, wherein the M bits percell comprise one or more of: extra page, upper page, or lower page. 8.The method of claim 1, wherein the n bits per cell comprises a top page.9. An apparatus comprising: registers and a memory controllercommunicatively coupled to the registers, the memory controller to:determine a number of threshold voltages in one or more regions within adistribution of threshold voltages used to program or erase a memorymedium, wherein the number of threshold voltages in one or more regionswithin a distribution of threshold voltages used to program or erase amemory medium comprises a summation of a number of threshold voltages ina region between or among an erase threshold voltage distribution and anadjacent program threshold voltage distribution and a number ofthreshold voltages in at least one region between or among two or moreprogram threshold voltage distributions, indicate, in a register, a passor fail status based on the number of threshold voltages in the one ormore regions; and cause a portion of the memory medium to store multiplepages of data based on received one or more instructions.
 10. Theapparatus of claim 9, wherein to indicate, in a register, a pass or failstatus based on the number of threshold voltages in the one or moreregions, the memory controller is to: indicate a pass status based on anumber of threshold voltages in one or more regions not meeting and notexceeding a threshold or indicate a fail status based on a number ofthreshold voltages in one or more regions meeting or exceeding thethreshold.
 11. The apparatus of claim 9, wherein to cause a portion ofthe memory medium to store multiple pages of data based on a receivedone or more instructions, the memory controller is to: perform errorcorrection on a second page of data stored in the memory medium andbased on a bit error rate of the error corrected second page of data notexceeding a second threshold, cause the memory medium to store multiplepages of data using a first page of data, the error corrected secondpage of data, and third and fourth pages of data, wherein the third andfourth pages of data comprise data stored in the memory medium.
 12. Theapparatus of claim 9, wherein to cause a portion of a memory medium tostore multiple pages of data based on a received one or moreinstructions, the memory controller is to: perform error correction on asecond page of data stored in the memory medium and based on a bit errorrate of the error corrected second page of data meeting or exceeding asecond threshold: perform error correction on a third page of datastored by the memory medium, perform error correction on a fourth pageof data stored by the memory medium, and cause the memory medium tostore multiple pages of data using a first page of data, the errorcorrected second page of data, the error corrected third page of data,and the error corrected fourth page of data.
 13. The apparatus of claim9, wherein the cause a portion of a memory medium to store multiplepages of data based on a received one or more instructions comprisesstorage of one or more of: an extra page, upper page, lower page, or atop page.
 14. The apparatus of claim 9, further comprising a memorymedium communicatively coupled to the memory controller, wherein thememory medium comprises one or more of: a single-level cell (SLC) NANDstorage device, a multi-level cell (MLC) NAND storage device,triple-level cell (TLC) NAND storage device, quad-level cell (QLC)storage device, a memory device that uses chalcogenide phase changematerial, NOR flash memory, single or multi-level phase change memory(PCM), a resistive memory, nanowire memory, ferroelectric transistorrandom access memory (FeTRAM), magneto resistive random access memory(MRAM) memory that incorporates memristor technology, spin transfertorque MRAM (STT-MRAM), random-access memory (RAM), Dynamic RAM (D-RAM),double data rate synchronous dynamic RAM (DDR SDRAM), staticrandom-access memory (SRAM), thyristor RAM (T-RAM), or zero-capacitorRAM (Z-RAM).
 15. The apparatus of claim 9, further comprising a hostdevice, the host device comprising: an interface communicatively coupledto the memory controller and at least one processor, the at least oneprocessor to: read the pass or fail status from the register, issue atleast one instruction to cause the memory controller to write a page ofdata together with pages of data stored by the memory medium based on apass status, and issue at least one instruction to cause the memorycontroller to perform error correction on at least one page of datastored by the memory medium based on a fail status.
 16. A systemcomprising: a computing system comprising a processor and a networkinterface and a memory device communicatively coupled to the computingsystem, the memory device comprising: a memory medium comprising aplurality of cells and a memory controller to: program a portion of theplurality of cells to store multiple pages of bits, determine a numberof threshold voltages in one or more regions associated with the portionof the plurality of cells, wherein the one or more regions comprise aregion between or among adjacent threshold voltage distributions,perform error correction on at least one of the pages based on thenumber of threshold voltages being at or above a threshold, and storemultiple pages of bits without error correction based on the number ofthreshold voltages being below the threshold.
 17. The system of claim16, wherein to perform error correction on at least one of the pagesbased on the number of threshold voltages being at or above a threshold,the memory controller is to: perform error correction on a second pageof bits; and cause storage of a first page, the error corrected secondpage of bits, and third and fourth pages of bits in the memory medium.18. The system of claim 17, wherein the memory controller is to: basedon a bit error rate of the error corrected second page of bits meetingor exceeding a second threshold: cause error correction on a third pageof bits; cause error correction on a fourth page of bits; cause storageof a first page of bits, received from the computing system, into thememory medium; cause storage of the error corrected second page of bitsinto the memory medium; cause storage of the error corrected third pageof bits into the memory medium; and cause storage of the error correctedfourth page of bits into the memory medium.
 19. The system of claim 16,wherein the memory medium comprises one or more of: a single-level cell(SLC) NAND storage device, a multi-level cell (MLC) NAND storage device,triple-level cell (TLC) NAND storage device, quad-level cell (QLC)storage device, a memory device that uses chalcogenide phase changematerial, NOR flash memory, single or multi-level phase change memory(PCM), a resistive memory, nanowire memory, ferroelectric transistorrandom access memory (FeTRAM), magneto resistive random access memory(MRAM) memory that incorporates memristor technology, spin transfertorque MRAM (STT-MRAM), random-access memory (RAM), Dynamic RAM (D-RAM),double data rate synchronous dynamic RAM (DDR SDRAM), staticrandom-access memory (SRAM), thyristor RAM (T-RAM), or zero-capacitorRAM (Z-RAM).